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this is information on a product in full production. june 2014 docid024348 rev 4 1/24 24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 n-channel 800 v, 0.37 ? typ., 12 a supermesh? 5 power mosfets in d2pak, to-220fp, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel zener-protected power mosfets realized in supermesh? 5, a revolutionary avalanche-rugged very high voltage power mosfet technology based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. to-220 1 2 3 tab 1 2 3 to-220fp 1 3 tab d 2 pak 1 2 3 to-247 d(2, tab) g(1) s(3) am01476v1 order codes v ds r ds(on) i d p tot STB13N80K5 800 v 0.45 ? 12 a 190 w stf13n80k5 35 w stp13n80k5 190 w stw13n80k5 table 1. device summary order codes marking packages packaging STB13N80K5 13n80k5 d2pak tape and reel stf13n80k5 to-220fp tube stp13n80k5 to-220 stw13n80k5 to-247 www.st.com
contents STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 2/24 docid024348 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 d 2 pak, STB13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-220fp, stf13n80k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 to-220, stp13n80k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4 to-247, stw13n80k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
docid024348 rev 4 3/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak, to-220, to-247 to-220fp v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 12 12 (1) 1. limited by package. a i d drain current (continuous) at t c = 100 c 7.6 7.6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 48 48 (1) a p tot total dissipation at t c = 25 c 190 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 148 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 12 a, di/dt 100 a/ s, v peak v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 640 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak to-220 to-220fp to-247 r thj-case thermal resistance junction-case max 0.66 3.57 c/w r thj-amb thermal resistance junction-amb max 62.5 50 r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max 30
electrical characteristics STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 4/24 docid024348 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 800 v i dss zero gate voltage drain current v gs = 0, v ds = 800 v 1 a v gs = 0, v ds = 800 v, tc=125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6 a 0.37 0.45 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -870- pf c oss output capacitance - 50 - pf c rss reverse transfer capacitance -2-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -110- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -43-pf r g intrinsic gate resistance f = 1mhz, i d =0 - 5 - ? q g total gate charge v dd = 640 v, i d = 12 a v gs =10 v (see figure 22 ) -29-nc q gs gate-source charge - 7 - nc q gd gate-drain charge - 18 - nc
docid024348 rev 4 5/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 electrical characteristics the built-in back-to-back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 6a, r g =4.7 ? , v gs =10 v (see figure 24 ) -16-ns t r rise time - 16 - ns t d(off) turn-off delay time - 42 - ns t f fall time - 16 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 14 a i sdm source-drain current (pulsed) - 56 a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs =0, i sd = 12 a - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/ s, (see figure 23 ) - 406 ns q rr reverse recovery charge - 5.7 c i rrm reverse recovery current - 28 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 23 ) - 600 ns q rr reverse recovery charge - 7.9 c i rrm reverse recovery current - 26 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d = 0 30 - - v
electrical characteristics STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 6/24 docid024348 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15687v1 i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15688v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15689v1
docid024348 rev 4 7/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 electrical characteristics figure 8. safe operating area for to-247 figure 9. thermal impedance for to-247 , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjohsxovh *,3*6$ figure 10. output characteristics figure 11. transfer characteristics figure 12. normalized v (br)dss vs temperature figure 13. static drain-source on-resistance i d 15 10 5 0 0 10 v ds (v) 20 (a) 5 15 20 25 6v 7v 8v v gs =11v 9v 30 10v am15690v1 i d 15 10 5 0 4 6 v gs (v) 8 (a) 5 7 20 25 30 v ds =20v 9 10 am15691v1 v (br)dss -100 t j (c) (norm) -50 50 0 100 0.85 0.9 0.95 1 1.05 i d =1ma 150 1.1 am15699v1 r ds(on) 0.3 0.2 0.1 0 2 6 i d (a) ( ) 4 8 0.4 0.5 0.6 v gs =10v 10 12 0.7 0.8 am15693v1
electrical characteristics STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 8/24 docid024348 rev 4 figure 14. gate charge vs gate-source voltage figure 15. capacitance variations figure 16. normalized gate threshold voltage vs temperature figure 17. normalized on-resistance vs temperature figure 18. source-drain diode forward characteristics figure 19. output capacitance stored energy v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 25 12 600 400 200 0 700 v ds v gs 300 500 100 30 am15692v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15694v1 v gs(th) 0.6 0.4 0.2 0 -100 t j (c) (norm) -50 0.8 50 0 100 i d =100a 150 1 1.2 am15696v1 r ds(on) 2 1.5 1 0.5 -100 t j (c) (norm) -50 50 0 100 2.5 0 v gs =10v i d =6a 150 am15697v1 v sd 0 4 i sd (a) (v) 2 6 8 0.5 0.6 0.7 0.8 0.9 1 t j =-50c t j =150c t j =25c 10 am15698v1 e oss 6 4 2 0 0 100 v ds (v) (j) 400 8 200 300 10 12 500 600 700 800 am15695v1
docid024348 rev 4 9/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 electrical characteristics figure 20. maximum avalanche energy vs. starting t j e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 am15700v1
test circuits STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 10/24 docid024348 rev 4 3 test circuits figure 21. switching times test circuit for resistive load figure 22. gate charge test circuit figure 23. test circuit for inductive load switching and diode recovery times figure 24. unclamped inductive load test circuit figure 25. unclamped inductive waveform figure 26. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024348 rev 4 11/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 12/24 docid024348 rev 4 4.1 d 2 pak, STB13N80K5 figure 27. d2pak (to-263) drawing 0079457_t
docid024348 rev 4 13/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 14/24 docid024348 rev 4 figure 28. d2pak footprint (a) a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024348 rev 4 15/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 package mechanical data 4.2 to-220fp, stf13n80k5 figure 29. to-220fp drawing 7012510_rev_k_b
package mechanical data STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 16/24 docid024348 rev 4 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
docid024348 rev 4 17/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 package mechanical data 4.3 to-220, stp13n80k5 figure 30. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 18/24 docid024348 rev 4 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024348 rev 4 19/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 package mechanical data 4.4 to-247, stw13n80k5 figure 31. to-247 drawing 0075325_g
package mechanical data STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 20/24 docid024348 rev 4 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024348 rev 4 21/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 packaging mechanical data 5 packaging mechanical data figure 32. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 22/24 docid024348 rev 4 figure 33. reel table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024348 rev 4 23/24 STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 revision history 6 revision history table 14. document revision history date revision changes 07-mar-2013 1 initial release. 27-mar-2013 2 updated figure 1: internal schematic diagram . minor text changes. document status promoted from preliminary data to production data. 15-apr-2013 3 ? modified: e as value, the entire typical values on table 5 , 6 and 7 ? inserted: section 2.1: electrical characteristics (curves) ? minor text changes 27-jun-2014 4 ? added: to-247 package ? added: figure 8 and 9 ? updated: section 4: package mechanical data ? minor text changes
STB13N80K5, stf13n80k5, stp13n80k5, stw13n80k5 24/24 docid024348 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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